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FPD3000SOT89
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FEATURES (1850MHZ):
* * * * * * 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant (Directive 2002/95/EC)
Datasheet v3.0
PACKAGE:
RoHS
GENERAL DESCRIPTION:
The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 3000 m Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The double recessed Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels.
TYPICAL APPLICATIONS:
* * * Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
Power at 1dB Gain Compression Small-Signal Gain Power-Added Efficiency
SYMBOL
P1dB SSG PAE
CONDITIONS
VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS; POUT = P1dB
MIN
29 11.5
TYP
30 13 45
MAX
UNITS
dBm dB %
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 25% IDSS
1.3 0.9
dB
Output Third-Order Intercept Point (from 15 to 5 dB below P1dB)
IP3
VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3 42 45 750 930 1.5 800 2 0.7 12 12 1.0 16 16 35 20 1.3 1100 mA mA mS A V V V C/W dBm
Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistance
IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| RJC
VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 3 mA IGS = 3 mA IGD = 3 mA
Note: TAMBIENT = 22; RF specification measured at f = 1850 MHz using CW signal (except as noted) 1
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD3000SOT89
Datasheet v3.0
ABSOLUTE MAXIMUM RATING :
PARAMETER
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power 2
1
SYMBOL
VDS VGS IDS IG PIN TCH TSTG PTOT Comp. 3
TEST CONDITIONS
-3V < VGS < -0.5V 0V < VDS < +8V For VDS < 2V Forward or reverse current Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below Under any bias conditions 2 or more Max. Limits
ABSOLUTE MAXIMUM
8V -3V IDss 30mA 600mW 175C -40C to 150C 3.5W 5dB
Channel Operating Temperature Storage Temperature Total Power Dissipation Gain Compression Simultaneous Combination of Limits
Notes: 1 TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22C: PTOT= 3.5 - (0.028W/C) x TPACK where TPACK= source tab lead temperature above 22C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 65C carrier temperature: PTOT = 3.5W - (0.028 x (65 - 22)) = 2.3W
BIASING GUIDELINES:
* Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. A Class A/B Bias of 25% to 33% of IDSS to achieve better OIP3 performance is suggested.
* *
2
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD3000SOT89
Datasheet v3.0
TYPICAL TUNED RF PERFORMANCE:
Power Transfer Characteristic
45% 40%
Drain Efficiency and PAE
45% 40% 35% 30% 25% 20% PAE 15% 10% 5% 0% 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 Input Power (dBm) Eff. 15% 10% 5% 0% Drain Efficiency (%)
32.0 31.0 Pout (dBm) 30.0 Output Power (dBm) 29.0 Comp Point
3.25 2.75
35%
2.25 Gain Compression, (dB)
30% PAE (%) 25% 20%
1.75 28.0 1.25 27.0 0.75 26.0 25.0 24.0 23.0 11.0 0.25 -0.25 -0.75 23.0
13.0
15.0
17.0 Input Power (dBm)
19.0
21.0
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS = 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for maximum output power at 1dB gain compression.
Typical Intermodulation performance VDS = 5V, IDS = 50% IDSS at f = 1.85GHz -40.00 21
Pout (dBm) 3rds (dBc)
-42.00 -44.00 -46.00 -48.00 3rd Order IM Products (dBc)
19 Output Power (dBm)
17 -50.00 -52.00 15 -54.00 13 -56.00 -58.00 11 0.7 1.7 2.8 3.8 4.7 5.7 6.8 7.8 8.8 9.8
Inout Power (dBm)
-60.00
MSG
Note: pHEMT devices have enhanced intermodulation performance. This yields OIP3 values of about P1dB + 14 dB. This IMD enhancement is affected by the quiescent bias and the matching applied to the device.
35 30 25 20 15 10
FPD3000SOT89 5V / 50%IDSS
MSG S21
DC IV Curves FPD3000SOT89
1.2
Mag S21
VG=-1.50V VG=-1.25V VG=-1.00V VG=-0.75V VG=-0.50V VG=-0.25V VG=0V 5.5 6.0
TYPICAL I-V CHARACTERISTICS:
&
1.0 Drain-Source Voltage (A) 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Drain-Source Voltage (V)
5 Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source 0 voltage 1.5 DS) 2.5 1.3V. This measurement7.5 8 (V at point 0.5 3.5 4.5 5.5 6.5 avoids the onset of Frequency (GHz) spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements, even in stabilized circuits.
3
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD3000SOT89
Datasheet v3.0
TYPICAL OUTPUT PLANE POWER CONTOURS: (VDS = 5v, IDS = 50%IDSS)
0. 8 1. 0 2. 0
0.4
0. 6 0.
Swp Max 143
0. 8 0. 6
1. 0 2. 0
Swp Max 131
3. 4.
3.0
0.
24dBm 25dBm 26dBm 27dBm
0. 2 0. 4 28dBm 0. 6 0. 1. 80 2. 0 3. 4. 5. 0 00
5.
0.2
10. 10 .0
0
24dBm 25dBm 26dBm 27dBm 28dBm
0. 0. 29dBm 2 4 0. 6 0. 8 1. 0 2. 0 3. 4. 5. 0 00
4.0 5.0
10.0 10 .0
0
29dBm
-
30dBm
-10.0 -0.2 -5.0
30dBm
-
-4.0 -3.0
2. 0. 1.
-
-0.4 2. 0 0. 8 1. 0
0.
0. 6
Swp Min 1
Swp Min 1
1850 MHz Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) s: 0.70 -165.5 0.17 - j0.12 (normalized) 8.5 - j6.0 Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown.
900 MHz Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) s: 0.78 -147.4 0.13 - j0.29 (normalized) 6.5 - j14.5 Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown.
TYPICAL SCATTERING PARAMETERS (50 SYSTEM):
FPD3000SOT89 5V / 50%IDSS
0. 8 0. 6
FPD3000SOT89 5V / 50%IDSS
6 0.
3.0 4.0
0.2
0.2 2.5 GHz
5.0
2 GHz 1.5 GHz
0 0. 2 0. 4 0. 6 0. 8 1. 0 2. 0 3. 0 4. 5. 00
10.0 10 .0
0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
1 GHz
1 GHz
-0.2 -5.0 -4.0
0
-0.4 2. 0 0. 8 1. 0
.4 -0
Swp Min 0.5GHz
-0.8
4
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
-1.0
S11
0. 6
S22
-0 .6
.0 -2
Website: www.filtronic.com
-3 .
-3.0
Swp Min 0.5GHz
-5.
-4 .0
0
2 -0.
-10. 0
-10.0
5.0
10.0
0. 4
4 GHz 0.4 3.5 GHz 3 GHz
2. 0
6 GHz 5 GHz 4 GHz 3 GHz
7 GHz
2. 0
5 GHz
6 GHz
1. 0
7 GHz
Swp Max 8GHz
Swp Max 8GHz
0.8
1.0
3.
0
0 4.
5.0
2 GHz
10.0
FPD3000SOT89
Datasheet v3.0
S-PARAMETERS: (BIASED @ 5V, 50%IDSS)
FREQ[GHz] 0.050 0.300 0.550 0.800 1.050 1.300 1.550 1.800 2.050 2.300 2.550 2.800 3.050 3.300 3.550 3.800 4.050 4.300 4.550 4.800 5.050 5.300 5.550 5.800 6.050 6.300 6.550 6.800 7.050 7.300 7.550 7.800 8.050 S11m 0.946 0.824 0.761 0.779 0.771 0.775 0.779 0.775 0.778 0.780 0.777 0.778 0.782 0.784 0.785 0.790 0.790 0.806 0.800 0.794 0.800 0.801 0.805 0.806 0.808 0.810 0.811 0.814 0.818 0.821 0.829 0.831 0.839 S11a -24.3 -97.5 -132.1 -150.7 -163.6 -173.0 178.6 171.1 164.5 158.1 152.3 146.8 142.6 137.7 133.2 129.0 124.8 120.7 115.1 111.6 107.0 102.6 98.0 93.8 89.5 85.4 81.3 77.4 73.2 69.0 64.8 60.2 55.5 S21m 36.120 19.282 12.243 8.992 7.020 5.802 4.934 4.306 3.834 3.444 3.131 2.878 2.636 2.459 2.286 2.146 2.017 1.896 1.821 1.728 1.648 1.576 1.516 1.461 1.411 1.360 1.317 1.272 1.232 1.189 1.149 1.108 1.066 S21a 159.0 120.3 103.2 91.8 84.0 76.3 70.1 63.6 57.8 52.0 46.1 40.4 34.9 29.4 24.0 18.7 13.3 9.0 3.4 -1.4 -6.7 -11.5 -16.5 -21.4 -26.2 -31.2 -36.3 -41.2 -46.3 -51.3 -56.4 -61.4 -66.3 S12m 0.006 0.027 0.037 0.043 0.048 0.054 0.059 0.064 0.069 0.074 0.080 0.085 0.088 0.093 0.097 0.101 0.105 0.106 0.113 0.117 0.121 0.123 0.128 0.132 0.136 0.139 0.143 0.146 0.151 0.153 0.157 0.159 0.160 S12a 79.8 56.8 45.6 40.5 38.3 35.9 34.7 31.7 29.8 27.5 24.3 22.1 19.1 15.6 12.7 9.6 5.7 4.5 1.5 -2.0 -5.4 -8.6 -11.8 -14.7 -18.0 -21.3 -24.6 -28.2 -31.7 -35.1 -38.8 -42.5 -46.5 S22m 0.175 0.384 0.478 0.507 0.522 0.529 0.528 0.532 0.529 0.531 0.531 0.534 0.537 0.544 0.545 0.551 0.555 0.575 0.574 0.575 0.577 0.580 0.583 0.583 0.586 0.588 0.593 0.592 0.601 0.607 0.614 0.623 0.634 S22a -145.5 -150.1 -165.4 -172.3 -179.1 176.4 171.9 167.4 163.2 158.7 154.2 149.1 143.6 138.2 132.9 127.8 123.2 118.8 113.3 109.7 105.9 102.6 98.7 95.2 91.1 86.9 82.4 77.7 73.0 68.2 63.5 59.3 55.3
5
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD3000SOT89
Datasheet v3.0
PACKAGE OUTLINE:
(dimensions in millimeters - mm)
TAPE DIMENSIONS AND PART ORIENTATION
FWYN
Also available with horizontal part orientation Hub diameter = 80mm Devices per reel = 1000
6
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD3000SOT89
Datasheet v3.0
DEVICE FOOT PRINT:
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters, noise parameters and device model are available on request.
RELIABILITY:
A MTTF of 4.2 million hours at a channel temperature of 150C is achieved for the process used to manufacture this device.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
Units in inches
ORDERING INFORMATION: PREFERRED ASSEMBLY INSTRUCTIONS:
This package is compatible with both lead free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020C. The maximum package temperature should not exceed 260C.
PART NUMBER
FPD3000SOT89 FPD3000SOT89E FPD3000SOT89(E)-BB FPD3000SOT89(E)-BA FPD3000SOT89(E)-BC FPD3000SOT89(E)-BD FPD3000SOT89(E)-BE FPD3000SOT89(E)-BG
DESCRIPTION
Packaged pHEMT RoHS compliant Packaged pHEMT 0.9 GHz evaluation board 1.85 GHz evaluation board 2.0 GHz evaluation board 2.2 GHz evaluation board 2.4 GHz evaluation board 2.6 GHz evaluation board
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing.
ESD/MSL RATING:
These devices should be treated as Class 0 (0250 V) using the human body model as defined in JEDEC Standard No. 22-A114. The device has a MSL rating of Level 2. To determine this rating, preconditioning was performed to the device per, the Pb-free solder profile defined within IPC/JEDEC J-STD-020C, Moisture / Reflow sensitivity classification for non-hermatic solid state surface mount devices.
7
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com

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